STD65N160M9

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N-channel 650 V, 132 mOhm typ., 20 A MDmesh M9 Power MOSFET in a DPAK package

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Product overview

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

  • All features

    • Worldwide best FOM RDS(on)*Qg among silicon-based devices
    • Higher VDSS rating
    • Higher dv/dt capability
    • Excellent switching performance
    • Easy to drive
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD65N160M9

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STD65N160M9
Active
DPAK Industrial Ecopack2

STD65N160M9

Package:

DPAK

Material Declaration**:

Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors