Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.-
All features
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Featured Videos
All tools & software
All resources
| Resource title | Version | Latest update |
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Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 3.0 | 09 Oct 2018 | 09 Oct 2018 |
Application Notes (2)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 19 Mar 2021 | 19 Mar 2021 | ||
| 1.1 | 19 Mar 2021 | 19 Mar 2021 |
Flyers (2)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 30 Apr 2021 | 30 Apr 2021 | ||
| 1.0 | 04 May 2020 | 04 May 2020 |
Brochures (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 03 Jun 2021 | 03 Jun 2021 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB20M65DF2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 23 Mar 2016 | 23 Mar 2016 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGB20M65DF2 | Active | Trench gate field-stop IGBT M series, 650 V 20 A low loss | D2PAK | Industrial | Ecopack2 | |
STGB20M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V 20 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGB20M65DF2 | 1 distributors | Buy Direct | Active | EAR99 | NEC | Tape And Reel | D2PAK | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V 20 A low loss | 1.2 / 1k | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
