STGB20M65DF2

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Trench gate field-stop, 650 V, 20 A, M series low loss IGBT

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
    • Tight parameters distribution
    • Low thermal resistance
    • Soft and very fast-recovery antiparallel diode

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STMicroelectronics - STGB20M65DF2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
STGB20M65DF2
Active
Trench gate field-stop, 650 V, 20 A, M series low loss IGBT D2PAK Industrial Ecopack2 10 2024-06-04T00:00:00.000+02:00

STGB20M65DF2

Package:

Trench gate field-stop, 650 V, 20 A, M series low loss IGBT

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop, 650 V, 20 A, M series low loss IGBT

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop, 650 V, 20 A, M series low loss IGBT

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