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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Key Features
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
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Product Specifications (1)
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| 09 Oct 2018 |
09 Oct 2018
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Application Notes (2)
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| 03 Apr 2020 |
03 Apr 2020
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| 13 Sep 2018 |
13 Sep 2018
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Flyers (2)
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| 13 Nov 2020 |
13 Nov 2020
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| 04 May 2020 |
04 May 2020
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Brochures (1)
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| 23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB20M65DF2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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HW Model, CAD Libraries & SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 23 Mar 2016 |
23 Mar 2016
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGB20M65DF2 |
Active
|
Trench gate field-stop IGBT M series, 650 V 20 A low loss | D2PAK | Industrial | Ecopack2 |
|
STGB20M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V 20 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGB20M65DF2 | 1 distributors | Free Sample Buy Direct |
Active
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EAR99 | NEC | Tape And Reel | D2PAK | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V 20 A low loss | 1.2 / 1k | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
