STGW60H65FB

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Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat)= 1.6 V (typ.) @ IC= 60 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance

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STMicroelectronics - STGW60H65FB

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGW60H65FB
Active
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed TO-247 Industrial Ecopack2

STGW60H65FB

Package:

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Package

TO-247

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGW60H65FB
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Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

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