STGW75H65DFB2-4

Active
Design Win

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

Download datasheet Order Direct

Product overview

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
    • Very fast and soft recovery co-packaged diode
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient
    • Excellent switching performance thanks to the extra driving kelvin pin

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGW75H65DFB2-4

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

Symbols

Footprints

Footprints

3D model

3D models

Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGW75H65DFB2-4
Active
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package TO247-4 Industrial Ecopack2

STGW75H65DFB2-4

Package:

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

Package

TO247-4

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Swipe or click the button to explore more details Don't show this again
Part Number
Marketing Status
Budgetary Price (US$)*/Qty
Order from ST
Order from distributors
Package
Packing Type
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
General Description
STGW75H65DFB2-4
Available at distributors

Distributor availability of STGW75H65DFB2-4

Distributor Name
Region Stock Min. Order Third party link

Distributor reported inventory date:

No availability of distributors reported, please contact our sales office

STGW75H65DFB2-4 Active

Budgetary Price (US$)*/Qty:
-
Package:
Packing Type:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

Part Number:

STGW75H65DFB2-4

General Description:

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

Distributor Name

Distributor reported inventory date:

Swipe or click the button to explore more details Don't show this again

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors