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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Key Features
- Worldwide best RDS(on)in TO-247
- Higher VDSSrating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STW88N65M5 | TO-247 | Tube |
Active
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- | - | EAR99 | CHINA | Check Availability |
STW88N65M5
Package
TO-247Packing Type
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
Featured Videos
Development Tools
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Picture Part number Manufacturer Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS Part NumberMOSFET product finder application for Android and iOS
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STW88N65M5 |
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TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
