Product overview
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.-
All features
- Very tight variation of on-resistance vs. temperature
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
All resources
| Resource title | Version | Latest update |
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Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 5.0 | 20 Sep 2019 | 20 Sep 2019 |
Application Notes (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 18 Jul 2022 | 18 Jul 2022 | ||
| 1.0 | 15 Jul 2019 | 15 Jul 2019 | ||
| 1.4 | 13 Sep 2018 | 13 Sep 2018 |
Technical Notes & Articles (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 2.2 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 19 Nov 2021 | 19 Nov 2021 | ||
| 1.0 | 22 Sep 2020 | 22 Sep 2020 |
User Manuals (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.3 | 21 Oct 2016 | 21 Oct 2016 |
Flyers (5 of 6)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 20 Jan 2022 | 20 Jan 2022 | ||
| 1.0 | 08 May 2020 | 08 May 2020 | ||
| 1.0 | 01 Feb 2021 | 01 Feb 2021 | ||
| 1.0 | 14 Oct 2020 | 14 Oct 2020 | ||
| 1.0 | 15 May 2020 | 15 May 2020 | ||
| 3.0 | 13 Jul 2022 | 13 Jul 2022 |
Brochures (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 25 Jul 2022 | 25 Jul 2022 |
Conference Papers (5 of 8)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 29 Apr 2021 | 29 Apr 2021 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCT20N120
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 02 Feb 2015 | 02 Feb 2015 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| SCT20N120 | Active | HIP247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
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| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| SCT20N120 | 2 distributors | Active | EAR99 | NEC | Tube | HIP247 | - | - | CHINA | | ||
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors