STGB10M65DF2

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Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
  • All features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
    • Tight parameter distribution
    • Safer paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode
    • Maximum junction temperature: TJ = 175 °C

All tools & software

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      STPOWER IGBT Finder

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      STPOWER IGBT finder mobile app for tablets and smartphones

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      STPOWER IGBT Finder

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      STPOWER IGBT finder mobile app for tablets and smartphones

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGB10M65DF2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB10M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 10 A low loss D2PAK Industrial Ecopack2

STGB10M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Material Declaration**:

PDF XML

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (EU)
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Temperature (°C) Budgetary Price (US$)*/Qty
More info
min
max
STGB10M65DF2 Available at 1 distributors

Distributor availability ofSTGB10M65DF2

Distributor Name
Region Stock Min. Order Third party link
Farnell Element14 EUROPE 1967 1 Buy from Distributor

Distributor reported inventory date: 2021-10-06

Distributor Name

Farnell Element14

Stock

1967

Min.Order

1

Distributor reported inventory date: 2021-10-06

Active
EAR99 NEC Tape And Reel D2PAK -55 175 1.05 / 1k
MORE INFO

Country of Origin:

CHINA

General Description:

Trench gate field-stop IGBT M series, 650 V 10 A low loss

STGB10M65DF2

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

1.05 / 1k

Distributor availability ofSTGB10M65DF2

Distributor Name
Region Stock Min. Order Third party link
Farnell Element14 EUROPE 1967 1 Buy from Distributor

Distributor reported inventory date: 2021-10-06

Distributor Name

Farnell Element14

Stock

1967

Min.Order

1

Distributor reported inventory date: 2021-10-06

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

D2PAK

Operating Temperature (°C)

(min)

-55

(max)

175

Budgetary Price (US$)* / Qty

1.05 / 1k

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors