This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (US)||Country of Origin||General Description||More info||Order from ST||Order from Distributors|
|STGB10M65DF2||D2PAK||Tape And Reel||Active : Product is in volume production||1.05||1000||EAR99||CHINA||Trench gate field-stop IGBT M series, 650 V 10 A low loss||MORE INFO||Free Sample Add to cart||DISTRIBUTOR AVAILABILITY|
|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|STGB10M65DF2||Active||Trench gate field-stop IGBT M series, 650 V 10 A low loss||D2PAK||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.