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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
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Product Specifications (1)
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| 13 Apr 2017 |
13 Apr 2017
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Application Notes (2)
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| 03 Apr 2020 |
03 Apr 2020
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| 13 Sep 2018 |
13 Sep 2018
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Flyers (2)
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13 Nov 2020
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| 04 May 2020 |
04 May 2020
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Brochures (1)
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| 23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB10M65DF2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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HW Model, CAD Libraries & SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 09 Jul 2015 |
09 Jul 2015
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGB10M65DF2 |
Active
|
Trench gate field-stop IGBT M series, 650 V 10 A low loss | D2PAK | Industrial | Ecopack2 |
|
STGB10M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V 10 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGB10M65DF2 | No availability of distributors reported, please contact our sales office |
Active
|
EAR99 | NEC | Tape And Reel | D2PAK | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V 10 A low loss | 1.05 / 1k | |||
Marketing Status
ActiveECCN (US)
EAR99Budgetary Price (US$)*/Qty
1.05 / 1k(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
