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STGB10M65DF2

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Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
    • Tight parameter distribution
    • Safer paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode
    • Maximum junction temperature: TJ = 175 °C
    Read more Read less

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Product Specifications (1)

Resource title
Latest update
DS10849 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package 6.0
13 Apr 2017
13 Apr 2017
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EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGB10M65DF2

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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SPICE models (1)

Resource title
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STGB10M65DF2 PSpice model 1.0
09 Jul 2015
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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB10M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 10 A low loss D2PAK Industrial Ecopack2

STGB10M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Material Declaration**:

PDF XML
More Info

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
More info
min
max
STGB10M65DF2 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tape And Reel D2PAK -55 175 1.05 / 1k
MORE INFO

Country of Origin:

CHINA

General Description:

Trench gate field-stop IGBT M series, 650 V 10 A low loss

STGB10M65DF2

Marketing Status

Active

ECCN (US)

EAR99
More Info

Budgetary Price (US$)*/Qty

1.05 / 1k

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

D2PAK

Operating Temperature (°C)

(min)

-55

(max)

175

Budgetary Price (US$)* / Qty

1.05 / 1k

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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