Ideal for high frequency operation with low switching losses.
ST GaN products will be targeting a wide variety of applications, such as power supplies and adaptors (PC, portable electronics, wall USB chargers, wireless chargers, etc.), power factor correction (PFC), and DC/DC converters. Regarding the automotive sector, GaN devices are particularly well suited for high-efficiency EV on-board chargers and mild-hybrid DC-DC converters at low voltage.
ST GaN technology is also highly suitable for integrated solutions such as the STi²GaN. New packaging concepts such as the embedded 2SPAK and PowerFLAT packages are also an integral part of GaN development, as they help manage the exceptionally high switching frequencies with packages that feature very low internal parasitic inductance.
Thanks to their superior performance GaN HEMTs help designers achieve higher conversion efficiency, smaller form factors, and new levels of power density.
Gallium Nitride (GaN) belongs to the family of wide bandgap (WBG) materials. It is a binary compound whose molecule is formed from one atom of Gallium (III-group, Z=31) and one of Nitrogen (V-group, Z=7) with a basic hexagonal (wurtzite) structure.
Get a true feedback about which application types and conditions it makes sense to use SiC MOSFETs rather than traditional silicon devices in terms of performance and cost-effectiveness.