ST’s MDmesh™ MOSFETs with a breakdown voltage range from 400 to 650 V offer an extremely low on-resistance (RDS(on)) down to 15 mΩ (650 V) in a MAX-247 package. 

  • MDmesh M5 series: outstanding RDS(on) values to significantly reduce power losses in high-power PFC circuits, power supplies and solar inverters. 
  • MDmesh M2 series: featuring an optimized trade-off between RDS(on) and capacitance profiles for soft-switching topologies.  
  • MDmesh DM2 series: fast recovery diode series optimized for full-bridge phase-shifted ZVS topologies. The series also includes AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V devices featuring a softer commutation behavior. 
  • MDmesh M6 series: ST’s latest super-junction technology optimized for resonant topologies. The series is available for Industrial and Automotive markets.  

These power MOSFETs are available in miniature and high-power packages: DPAK, IPAK, D2PAK, H2PAK, I2PAK, I2PAKFP, MAX-247, ISOTOP, SO8, SOT-223, TO-220, TO-247, TO-247-4, TO-3PF, TOLL and PowerFLAT family (3.3 x 3.3 mm, 5 x 5 mm, 5 x 6 mm HV, and 8 x 8 mm HV).

New 650 V MDmesh M2 power MOSFETs

The M2 series of super-junction MOSFETs has been extended with the introduction of  650 V devices ensuring a higher safety margin for more robust and reliable applications. The low on-resistance (down to 0.36Ω in the TO-220 package) combined with low gate charge and input/output capacitances enable highly-efficient adapters, solar micro-inverters and lighting applications. 

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