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STPOWER N-channel MOSFETs > 350 V to 700 V

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ST's MDmesh super-junction (SJ) MOSFETs with a breakdown voltage range from 400 V to 650 V offer an extremely low on-resistance (RDS(ON)) down to 15 mΩ (650 V) in a MAX-247 package. These N-channel SJ MOSFETs belong to the STPOWER family.

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STPOWER MOSFET standard series

Different dedicated product series are available depending on the target circuit topology and application. Technology versatility and flexibility allow system designers to get a large variety of options from the previous series (M2, M5, M6) to the latest M9 that is suitable both for hard switching topologies and for resonant ones, massively used on high-power density system.

M2
Super-junction power MOSFETs featuring an optimized trade-off between R DS(on) and capacitance profiles for soft-switching topologies.
M5
Super-junction power MOSFETs with excellent R DS(on) values to significantly increase system efficiency as high-power PFC circuits in Telecom Servers and Solar inverters.
M6
ST's latest super-junction technology optimized for resonant topologies, suitable for high power applications.
M9
Super-junction power MOSFETs with one of the industry’s best on-resistance per area to significantly reduce total power losses in Servers, Data Centers, 5G Power Stations, Microinverters based on PFC, Resonant DC-DC converters topologies. The series is available for industrial and automotive markets.

STPOWER MOSFET fast-recovery body diode series

Furthermore, MDmesh series also includes the version (DM2, DM6, DM9) with a fast recovery intrinsic diode. Thanks to an added platinum diffusion process with respect to the standard process, an enhancing in the performance of the integral body-diode in terms of reduced reverse recovery time trr, and reverse recovery charge Qrr plus improved dv/dt (DMx series) has been obtained, all features being ideal in bridge and high-power phase-shift circuits.

DM2
Fast-recovery diode MOSFETs, good choice for full-bridge phase-shifted ZVS topologies. The series also includes AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V devices for automotive applications.
DM6
Fast-recovery super-junction MOSFETs with very good R DS(on) per area and optimized for full-bridge phase-shifted ZVS topologies. The series also includes AEC-Q101-qualified 600 V and 650 V devices for automotive applications.
DM9
Fast-recovery super-junction MOSFETs with one of the industry’s best on-resistance per area and with very low Q g, Q rr and t rr tailored for half bridge,full-bridge phase-shifted ZVS topologies. The series also includes AEC-Q101-qualified 600 V and 650 V devices for automotive applications, featuring a softer commutation behavior for very high efficiency systems.

These MDmesh SJ power MOSFETs are available in miniature and high-power packages: HU3PAK, DPAK, IPAK, D2PAK, H2PAK, I2PAK, MAX-247, ISOTOP, SOT-223, SOT223-2L, TO-220, TO-220FP, TO-247, TO-247 long leads TO-247-4, TO-3PF, TO-LL and PowerFLAT family (3.3 x 3.3 mm, 5 x 5 mm, 5 x 6 mm HV, and 8 x 8 mm HV).

Our wide STPOWER product portfolio, combined with state-of-the-art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

St power mosfets 350v to 700v product portfolio M2 M6 M5 M9 DM2 DM6 DM9

New 650 V MDmesh M2 power MOSFETs

The M2 series of super-junction (SJ) MOSFETs has been extended with the introduction of 650 V devices ensuring a higher safety margin for more robust and reliable applications. The low on-resistance (down to 0.36Ω in the TO-220 package) combined with low gate charge and input/output capacitances enable highly-efficient adapters, solar micro-inverters and lighting applications.