ST’s power MOSFET portfolio offers a broad range of breakdown voltages from -100 V to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage power MOSFETs (MDmesh™) and low-voltage power MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.
The main features of our wide portfolio include:
-100 V to 1700 V breakdown voltage range
More than 30 package options including the 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ family, from 2 x 2 mm up to 8 x 8 mm for low-voltage, high-voltage and very-high-voltage power MOSFETs featuring excellent thermal performance thanks to a large exposed metal drain pad
Improved gate charge and lower on-state resistance to meet today’s challenging efficiency requirements
Intrinsic fast body diode option for selected product lines
Wide portfolio of automotive-grade power MOSFETs
In each voltage range supporting Industrial and Automotive applications such as Switch Mode Power Supplies (SMPS), Lighting, Motor Control, Energy Generation and Electro Mobility, Chassis & Safety, Body & Convenience, ST has the right power MOSFET for your design.