Product Longevity

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 7 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 7 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 10 years for the products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 10 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by  STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 15 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 15 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by  STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

SiCデバイス

タイトル
概要
長期供給保証の開始日
STPSC10065DLF
量産中
650 V 10 A power Schottky silicon carbide diode January 2020

STPSC10065DLF

650 V 10 A power Schottky silicon carbide diode

開始日

January 2020

イメージング & フォトニクス・ソリューション

タイトル
概要
長期供給保証の開始日
VL53L0X
量産中
Time-of-Flight ranging sensor January 2019
VL53L1X
量産中
Time-of-Flight ranging sensor based on ST's FlightSense technology January 2019
VL53L3CX
量産中
複数の対象物を同時に検出する機能を搭載したTime-of-Flight測距センサ January 2019
VL6180V1
量産中
Time-of-Flight proximity sensor January 2019
VL6180X
量産中
Proximity sensor and ambient light sensing (ALS) module January 2015

VL53L0X

Time-of-Flight ranging sensor

開始日

January 2019

VL53L1X

Time-of-Flight ranging sensor based on ST's FlightSense technology

開始日

January 2019

VL53L3CX

複数の対象物を同時に検出する機能を搭載したTime-of-Flight測距センサ

開始日

January 2019

VL6180V1

Time-of-Flight proximity sensor

開始日

January 2019

VL6180X

Proximity sensor and ambient light sensing (ALS) module

開始日

January 2015

ダイオード

タイトル
概要
長期供給保証の開始日
STPS10H100SFY
量産中
Automotive 100 V, 10 A High Tj Power Schottky Rectifier March 2019
STPSC10H065DLF
量産中
650 V 10 A power Schottky silicon carbide diode January 2020
STPSC4H065DLF
量産中
4 A, 650 V SiC Power Schottky Diode January 2020
STPSC6H065DLF
量産中
6 A, 650 V SiC Power Schottky Diode January 2020
STPSC8H065DLF
量産中
8 A 650 V SiC Power Schottky Diode January 2020

STPS10H100SFY

Automotive 100 V, 10 A High Tj Power Schottky Rectifier

開始日

March 2019

STPSC10H065DLF

650 V 10 A power Schottky silicon carbide diode

開始日

January 2020

STPSC4H065DLF

4 A, 650 V SiC Power Schottky Diode

開始日

January 2020

STPSC6H065DLF

6 A, 650 V SiC Power Schottky Diode

開始日

January 2020

STPSC8H065DLF

8 A 650 V SiC Power Schottky Diode

開始日

January 2020

パワー・トランジスタ

タイトル
概要
長期供給保証の開始日
SCT1000N170
量産中
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package July 2020
SCTW70N120G2V
量産中
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package July 2020
SCTW90N65G2V
量産中
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package July 2020

SCT1000N170

Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package

開始日

July 2020

SCTW70N120G2V

Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package

開始日

July 2020

SCTW90N65G2V

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

開始日

July 2020

測位IC

タイトル
概要
長期供給保証の開始日
Teseo-LIV3F
量産中
Tiny GNSS module January 2019
Teseo-LIV3R
量産中
Teseo ROM GNSS module June 2019

Teseo-LIV3F

Tiny GNSS module

開始日

January 2019

Teseo-LIV3R

Teseo ROM GNSS module

開始日

June 2019

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