Product Longevity
Longevity Commitment
STMicroelectronics provides a minimum longevity commitment of 7 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.
The 7 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).
In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).
Longevity Commitment
STMicroelectronics provides a minimum longevity commitment of 10 years for the products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.
The 10 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).
In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).
Longevity Commitment
STMicroelectronics provides a minimum longevity commitment of 15 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.
The 15 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).
In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).
Diodes and Rectifiers
| Title | Description | Starting date of Longevity Commitment |
|---|---|---|
|
STPS10H100SFY
Active
|
Automotive 100 V, 10 A High Tj Power Schottky Rectifier | March 2019 |
|
STPSC10H065DLF
Active
|
650 V 10 A power Schottky silicon carbide diode | January 2020 |
|
STPSC4H065DLF
Active
|
4 A, 650 V SiC Power Schottky Diode | January 2020 |
|
STPSC6H065DLF
Active
|
6 A, 650 V SiC Power Schottky Diode | January 2020 |
|
STPSC8H065DLF
Active
|
8 A 650 V SiC Power Schottky Diode | January 2020 |
Starting date
March 2019Starting date
January 2020Starting date
January 2020Starting date
January 2020Starting date
January 2020Imaging and Photonics Solutions
| Title | Description | Starting date of Longevity Commitment |
|---|---|---|
|
VL53L0X
Active
|
Time-of-Flight ranging sensor | January 2019 |
|
VL53L1X
Active
|
Time-of-Flight ranging sensor based on ST's FlightSense technology | January 2019 |
|
VL53L3CX
Active
|
Time-of-Flight ranging sensor with multi target detection | January 2019 |
|
VL6180V1
Active
|
Time-of-Flight proximity sensor | January 2019 |
|
VL6180X
Active
|
Proximity sensor and ambient light sensing (ALS) module | January 2015 |
Starting date
January 2019Starting date
January 2019Starting date
January 2019Starting date
January 2019Starting date
January 2015Positioning
| Title | Description | Starting date of Longevity Commitment |
|---|---|---|
|
Teseo-LIV3F
Active
|
Tiny GNSS module | January 2019 |
|
Teseo-LIV3R
Active
|
Teseo ROM GNSS module | June 2019 |
Starting date
January 2019Starting date
June 2019Power Transistors
| Title | Description | Starting date of Longevity Commitment |
|---|---|---|
|
SCT1000N170
Active
|
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package | July 2020 |
|
SCTW70N120G2V
Active
|
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package | July 2020 |
|
SCTW90N65G2V
Active
|
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package | July 2020 |
Starting date
July 2020Starting date
July 2020Starting date
July 2020SiC Devices
| Title | Description | Starting date of Longevity Commitment |
|---|---|---|
|
STPSC10065DLF
Active
|
650 V 10 A power Schottky silicon carbide diode | January 2020 |
Starting date
January 2020
