Product Longevity

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 7 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 7 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 10 years for the products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 10 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by  STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 15 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 15 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by  STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

Longevity Commitment

STMicroelectronics provides a minimum longevity commitment of 20 years for a set of products listed below.
In case the product of interest is not currently covered by the program, please contact your local sales office for support.

The 20 years longevity commitment includes the period of notification as set forth in the standard STMicroelectronics end-of-life notification policy (PTN).

In case of significant volume decrease, technology or manufacturing changes, a switch to a comparable product, another technology or a different manufacturing facility could be decided by  STMicroelectronics who will notify customers using the standard STMicroelectronics product/process change policy (PCN).

Diodes and Rectifiers

Title
Description
Starting date of Longevity Commitment
STPS10H100SFY
Active
Automotive 100 V, 10 A High Tj Power Schottky Rectifier March 2019
STPSC10H065DLF
Active
650 V 10 A power Schottky silicon carbide diode January 2020
STPSC4H065DLF
Active
4 A, 650 V SiC Power Schottky Diode January 2020
STPSC6H065DLF
Active
6 A, 650 V SiC Power Schottky Diode January 2020
STPSC8H065DLF
Active
8 A 650 V SiC Power Schottky Diode January 2020
STPST10H100-Y
Active
Automotive 100 V, 10 A Power Schottky Trench Rectifier March 2019
STPST10H100SB-Y
Active
Automotive 100 V, 10 A, DPAK Power Schottky Trench Rectifier March 2019

STPS10H100SFY

Automotive 100 V, 10 A High Tj Power Schottky Rectifier

Starting date

March 2019

STPSC10H065DLF

650 V 10 A power Schottky silicon carbide diode

Starting date

January 2020

STPSC4H065DLF

4 A, 650 V SiC Power Schottky Diode

Starting date

January 2020

STPSC6H065DLF

6 A, 650 V SiC Power Schottky Diode

Starting date

January 2020

STPSC8H065DLF

8 A 650 V SiC Power Schottky Diode

Starting date

January 2020

STPST10H100-Y

Automotive 100 V, 10 A Power Schottky Trench Rectifier

Starting date

March 2019

STPST10H100SB-Y

Automotive 100 V, 10 A, DPAK Power Schottky Trench Rectifier

Starting date

March 2019

Imaging and Photonics Solutions

Title
Description
Starting date of Longevity Commitment
VD6283TX
Active
Hybrid filter multispectral sensor with light flicker engine (Ambient Light Sensor) July 2021
VL53L0X
Active
Time-of-Flight ranging sensor January 2019
VL53L1CB
Active
Time-of-Flight ranging sensor with advanced multi-zone and multi-object detection January 2019
VL53L1CX
Active
Time-of-Flight ranging sensor based on ST's FlightSense technology January 2019
VL53L3CX
Active
Time-of-Flight ranging sensor with multi target detection January 2019
VL53L4CD
Active
Time-of-Flight high accuracy proximity sensor July 2021
VL53L4CX
Active
Time-of-Flight sensor with extended range measurement July 2021
VL53L5CX
Active
Time-of-Flight 8x8 multizone ranging sensor with wide field of view July 2021
VL6180V1
Active
Time-of-Flight proximity sensor January 2019
VL6180X
Active
Proximity sensor and ambient light sensing (ALS) module January 2019

VD6283TX

Hybrid filter multispectral sensor with light flicker engine (Ambient Light Sensor)

Starting date

July 2021

VL53L0X

Time-of-Flight ranging sensor

Starting date

January 2019

VL53L1CB

Time-of-Flight ranging sensor with advanced multi-zone and multi-object detection

Starting date

January 2019

VL53L1CX

Time-of-Flight ranging sensor based on ST's FlightSense technology

Starting date

January 2019

VL53L3CX

Time-of-Flight ranging sensor with multi target detection

Starting date

January 2019

VL53L4CD

Time-of-Flight high accuracy proximity sensor

Starting date

July 2021

VL53L4CX

Time-of-Flight sensor with extended range measurement

Starting date

July 2021

VL53L5CX

Time-of-Flight 8x8 multizone ranging sensor with wide field of view

Starting date

July 2021

VL6180V1

Time-of-Flight proximity sensor

Starting date

January 2019

VL6180X

Proximity sensor and ambient light sensing (ALS) module

Starting date

January 2019

Positioning

Title
Description
Starting date of Longevity Commitment
Teseo-LIV3F
Active
Tiny GNSS module January 2019
Teseo-LIV3FL
Active
Tiny GNSS low power module December 2021
Teseo-LIV3R
Active
Teseo ROM GNSS module June 2019
Teseo-LIV4F
Active
Tiny GNSS multi-bands module April 2023

Teseo-LIV3F

Tiny GNSS module

Starting date

January 2019

Teseo-LIV3FL

Tiny GNSS low power module

Starting date

December 2021

Teseo-LIV3R

Teseo ROM GNSS module

Starting date

June 2019

Teseo-LIV4F

Tiny GNSS multi-bands module

Starting date

April 2023

Power Management

Title
Description
Starting date of Longevity Commitment
STWBC2-HP
Active
Qi-compatible inductive wireless charger power transmitter for up to 100W applications July 2022
STWBC86
Active
Qi-compatible inductive wireless charger power transmitter for up to 5W applications April 2022
STWLC38
Active
Qi-compliant inductive wireless charger power receiver for up to 15W applications March 2022
STWLC98
Active
Qi-compliant inductive wireless charger power receiver for 70W applications August 2021
STWLC99
Active
Qi-compliant inductive wireless charger power receiver for 100W applications July 2022

STWBC2-HP

Qi-compatible inductive wireless charger power transmitter for up to 100W applications

Starting date

July 2022

STWBC86

Qi-compatible inductive wireless charger power transmitter for up to 5W applications

Starting date

April 2022

STWLC38

Qi-compliant inductive wireless charger power receiver for up to 15W applications

Starting date

March 2022

STWLC98

Qi-compliant inductive wireless charger power receiver for 70W applications

Starting date

August 2021

STWLC99

Qi-compliant inductive wireless charger power receiver for 100W applications

Starting date

July 2022

Power Transistors

Title
Description
Starting date of Longevity Commitment
SCT1000N170
Active
Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package July 2020
SCTW70N120G2V
Active
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package July 2020
SCTW90N65G2V
Active
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package July 2020

SCT1000N170

Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

Starting date

July 2020

SCTW70N120G2V

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

Starting date

July 2020

SCTW90N65G2V

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

Starting date

July 2020

SiC Devices

Title
Description
Starting date of Longevity Commitment
STPSC10065DLF
Active
650 V 10 A power Schottky silicon carbide diode January 2020

STPSC10065DLF

650 V 10 A power Schottky silicon carbide diode

Starting date

January 2020